Memory cells, methods of fabrication, and semiconductor devices

ABSTRACT

A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magneto resistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

TECHNICAL FIELD

The present disclosure, in various embodiments, relates generally to thefield of memory device design and fabrication. More particularly, thisdisclosure relates to design and fabrication of memory cellscharacterized as spin torque transfer magnetic random access memory(STT-MRAM) cells.

BACKGROUND

Magnetic Random Access Memory (MRAM) is a non-volatile computer memorytechnology based on magnetoresistance. One type of MRAM cell is a spintorque transfer MRAM (STT-MRAM) cell, which includes a magnetic cellcore supported by a substrate. The magnetic cell core includes at leasttwo magnetic regions, for example, a “fixed region” and a “free region,”with a non-magnetic region between. The free region and the fixed regionmay exhibit magnetic orientations that are either horizontally oriented(“in-plane”) or perpendicularly oriented (“out-of-plane”) with the widthof the regions. The fixed region includes a magnetic material that has asubstantially fixed (e.g., a non-switchable) magnetic orientation. Thefree region, on the other hand, includes a magnetic material that has amagnetic orientation that may be switched, during operation of the cell,between a “parallel” configuration and an “anti-parallel” configuration.In the parallel configuration, the magnetic orientations of the fixedregion and the free region are directed in the same direction (e.g.,north and north, east and east, south and south, or west and west,respectively). In the “anti-parallel” configuration, the magneticorientations of the fixed region and the free region are directed inopposite directions (e.g., north and south, east and west, south andnorth, or west and east, respectively). In the parallel configuration,the STT-MRAM cell exhibits a lower electrical resistance across themagnetoresistive elements (e.g., the fixed region and free region). Thisstate of low electrical resistance may be defined as a “0” logic stateof the MRAM cell. In the anti-parallel configuration, the STT-MRAM cellexhibits a higher electrical resistance across the magnetoresistiveelements. This state of high electrical resistance may be defined as a“1” logic state of the STT-MRAM cell.

Switching of the magnetic orientation of the free region may beaccomplished by passing a programming current through the magnetic cellcore and the fixed and free regions therein. The fixed region polarizesthe electron spin of the programming current, and torque is created asthe spin-polarized current passes through the core. The spin-polarizedelectron current exerts the torque on the free region. When the torqueof the spin-polarized electron current passing through the core isgreater than a critical switching current density (J_(r)) of the freeregion, the direction of the magnetic orientation of the free region isswitched. Thus, the programming current can be used to alter theelectrical resistance across the magnetic regions. The resulting high orlow electrical resistance states across the magnetoresistive elementsenable the write and read operations of the MRAM cell. After switchingthe magnetic orientation of the free region to achieve the one of theparallel configuration and the anti-parallel configuration associatedwith a desired logic state, the magnetic orientation of the free regionis usually desired to be maintained, during a “storage” stage, until theMRAM cell is to be rewritten to a different configuration (i.e., to adifferent logic state).

A magnetic region's magnetic anisotropy (“MA”) is an indication of thedirectional dependence of the material's magnetic properties. Therefore,the MA is also an indication of the strength of the material's magneticorientation and of its resistance to alteration of its orientation. Amagnetic material exhibiting a magnetic orientation with a high MAstrength may be less prone to alteration of its magnetic orientationthan a magnetic material exhibiting a magnetic orientation with a low MAstrength. Therefore, a free region with a high MA strength may be morestable during storage than a free region with a low MA strength.

Contact or near contact between certain nonmagnetic material (e.g.,oxide material) and magnetic material may induce MA (e.g., increase MAstrength) along a surface of the magnetic material, adding to theoverall MA strength of the magnetic material and the MRAM cell.Generally, the greater the ratio of the magnetic material in contactwith the surface/interface MA-inducing material to the non-contactedportion of the magnetic material, the higher the MA strength of themagnetic region. Therefore, generally, conventional magnetic cellstructures directly contact the magnetic material of, e.g., the freeregion, to a neighboring MA-inducing oxide region, without anothermaterial between the magnetic material and the MA-inducing material.

Other beneficial properties of free regions are often associated withthick (i.e., a high, vertical dimension) free regions and with themicrostructure of the free regions. These properties include, forexample, the cell's tunnel magnetoresistance (“TMR”). TMR is a ratio ofthe difference between the cell's electrical resistance in theanti-parallel configuration (R_(ap)) and its resistance in the parallelconfiguration (R_(p)) to R_(p) (i.e., TMR=(R_(ap)−R_(p))/R_(p)).Generally, a thick free region with few structural defects in themicrostructure of its magnetic material has a higher TMR than a thinfree region with structural defects. A cell with high TMR may have ahigh read-out signal, which may speed the reading of the MRAM cellduring operation. High TMR may also enable use of low programmingcurrent.

A thick, defect-free free region may also have a higher energy barrier(Eb) and higher energy barrier ratio (Eb/kT) compared to a thin,defect-including free region. The energy barrier ratio is a ratio of Ebto kT, wherein k is the Boltzmann constant and T is temperature. The Eband the energy barrier ratio are indications of the cell's thermalstability and, therefore, its data retention. The higher the Eb and thehigher the energy barrier ratio, the less prone the cell may be topremature switching (e.g., switching out of a programmed parallel oranti-parallel configuration during storage).

A defect-free free region that is “magnetically continuous” (i.e., notinterrupted by non-magnetic material dispersed among magnetic material)may have a higher exchange stiffness than a defect-including,magnetically interrupted free region. Exchange stiffness (A=E_(ex)/a,E_(ex)=exchange energy per atom, a=distance) is a property of a magneticmaterial. Generally, the higher the exchange stiffness of a magneticmaterial, the better the magnetic material may perform as a free regionof an MRAM cell.

Efforts have been made to form free regions that have a high MA strengthas well as a thickness conducive for high TMR, or other properties, bypositioning a thick free region between two MA-inducing materials,doubling the surface area of the magnetic material exposed to theMA-inducing material. However, a conventional MA-inducing material maybe electrically resistant. Therefore, including a second MA-inducingmaterial region in the MRAM cell increases the electrical resistance ofthe magnetic cell core. Including a second MA-inducing material regionin conventional MRAM cell structures may also lead to structural defectsin the cell core. Accordingly, forming MRAM cell structures having highMA strength, high TMR, high energy barriers and energy barrier ratios,and high exchange stiffness has presented challenges.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional, elevational, schematic illustration of amagnetic cell structure according to an embodiment of the presentdisclosure, wherein an attracter region is proximate to a secondaryoxide region and a free region of the structure, the secondary oxideregion underlying the free region and the attracter region.

FIG. 1B is an enlarged view of box B of FIG. 1, according to analternate embodiment of the present disclosure, wherein an attracterregion and a secondary oxide region are integrated with one another.

FIG. 1C is a cross-sectional, elevational, schematic illustration of amagnetic cell structure according to an embodiment of the presentdisclosure, wherein an attracter region is proximate to a secondaryoxide region and a free region of the structure, the secondary oxideregion overlying the free region and the attracter region.

FIGS. 2 through 5 are cross-sectional, elevational, schematicillustrations of a magnetic cell structure during various stages ofprocessing, according to an embodiment of the present disclosure,wherein an attracter material is formed proximate to an oxide materialand a magnetic material.

FIGS. 6 through 12 are cross-sectional, elevational, schematicillustrations of a magnetic cell structure during various stages ofprocessing, according to an embodiment of the present disclosure,wherein an attracter oxide region is formed proximate a magneticmaterial.

FIG. 13 is a schematic diagram of an STT-MRAM system including a memorycell having a magnetic cell structure according to an embodiment of thepresent disclosure.

FIG. 14 is a simplified block diagram of a semiconductor devicestructure including memory cells having a magnetic cell structureaccording to an embodiment of the present disclosure.

FIG. 15 is a simplified block diagram of a system implemented accordingto one or more embodiments of the present disclosure.

FIG. 16 is a cross-sectional, elevational, schematic illustration of amagnetic cell structure without an attracter region proximate to anoxide material and a magnetic material.

FIG. 17A is an R-H loop plot of the magnetic cell structure of FIG. 16.

FIG. 17B is an in-plane loop plot of the magnetic cell structure of FIG.16.

FIG. 17C is an M-H loop plot of the magnetic cell structure of FIG. 16.

FIG. 18 is a cross-sectional, elevational, schematic illustration of amagnetic cell structure, wherein an attracter region is proximate to anoxide material and a magnetic material.

FIG. 19A is an R-H loop plot of the magnetic cell structure of FIG. 18.

FIG. 19B is an in-plane loop plot of the magnetic cell structure of FIG.18.

FIG. 19C is an M-H loop plot of the magnetic cell structure of FIG. 18.

FIG. 20 is a cross-sectional, elevational, schematic illustration of amagnetic cell structure comprising a thicker attracter region comparedto the magnetic cell structure of FIG. 18.

FIG. 21 is a cross-sectional, elevational, schematic illustration of amagnetic cell structure comprising a thinner oxide region, proximate tothe attracter region, compared to the magnetic cell structure of FIG.20.

FIG. 22 is an R-H loop plot of the magnetic cell structure of FIG. 21.

DETAILED DESCRIPTION

Memory cells, methods of forming memory cells, semiconductor devices,memory systems, and electronic systems are disclosed. The memory cellsinclude a magnetic region (e.g., a free region), formed from a magneticmaterial, between two oxide regions. Both oxide regions may be magneticanisotropy (“MA”)-inducing regions. The magnetic material, from whichthe magnetic region is formed, includes a “diffusible species” and atleast one other species. The presence of the diffusible species in themagnetic material may not be necessary for the magnetic material toexhibit magnetism. An attracter material is proximate to the magneticregion and is formulated to have a higher chemical affinity for thediffusible species than a chemical affinity between the diffusiblespecies and the at least one other species of the magnetic material.Thus, the proximity of the attracter material to the magnetic regionleads to the diffusible species being removed from the magnetic materialand incorporated into the attracter material, e.g., during an anneal.The removal of the diffusible species from the magnetic material mayenable crystallization of the magnetic region with a desired crystallinestructure (e.g., a bcc (001) crystalline structure) that promotes a highTMR (tunnel magnetoresistance) and includes few structural defects.Thus, the magnetic region may be formed to be thick (e.g., of a heightthat is greater than about 8 Å (about 0.8 nm), e.g., greater than about10 Å (about 1.0 nm)), enabling a high energy barrier (Eb) and energybarrier ratio (Eb/kT). Furthermore, positioning the magnetic regionbetween two MA-inducing oxide regions enables a high MA strength. Thehigh MA strength may be achieved even in embodiments in which theattracter material is between the oxide material and the magneticmaterial. Additionally, the magnetic region may be formed as acontinuous magnetic region, uninterrupted by non-magnetic material,enabling a high exchange stiffness.

As used herein, the term “substrate” means and includes a base materialor other construction upon which components, such as those within memorycells, are formed. The substrate may be a semiconductor substrate, abase semiconductor material on a supporting structure, a metalelectrode, or a semiconductor substrate having one or more materials,structures, or regions formed thereon. The substrate may be aconventional silicon substrate or other bulk substrate including asemiconductive material. As used herein, the term “bulk substrate” meansand includes not only silicon wafers, but also silicon-on-insulator(“SOI”) substrates, such as silicon-on-sapphire (“SOS”) substrates orsilicon-on-glass (“SOG”) substrates, epitaxial layers of silicon on abase semiconductor foundation, or other semiconductor or optoelectronicmaterials, such as silicon-germanium (Si_(1-x)Ge_(x), where x is, forexample, a mole fraction between 0.2 and 0.8), germanium (Ge), galliumarsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP), amongothers. Furthermore, when reference is made to a “substrate” in thefollowing description, previous process stages may have been utilized toform materials, regions, or junctions in the base semiconductorstructure or foundation.

As used herein, the term “STT-MRAM cell” means and includes a magneticcell structure that includes a magnetic cell core including anonmagnetic region disposed between a free region and a fixed region.The nonmagnetic region may be an electrically insulative (e.g.,dielectric) region, in a magnetic tunnel junction (“MTJ”) configuration.For example, the nonmagnetic region, between the free and fixed regions,may be an oxide region (referred to herein as the “intermediate oxideregion”).

As used herein, the terms “magnetic cell core” means and includes amemory cell structure comprising the free region and the fixed regionand through which, during use and operation of the memory cell, currentmay be passed (i.e., flowed) to effect a parallel or anti-parallelconfiguration of the magnetic orientations of the free region and thefixed region.

As used herein, the term “magnetic region” means a region that exhibitsmagnetism. A magnetic region includes a magnetic material and may alsoinclude one or more non-magnetic materials.

As used herein, the term “magnetic material” means and includesferromagnetic materials, ferrimagnetic materials, antiferromagnetic, andparamagnetic materials.

As used herein, the term “CoFeB material” means and includes a materialcomprising cobalt (Co), iron (Fe), and boron (B) (e.g.,Co_(x)Fe_(y)B_(z), wherein x=10 to 80, y=10 to 80, and z=0 to 50). ACoFeB material may or may not exhibit magnetism, depending on itsconfiguration (e.g., its thickness).

As used herein, the “species” means and includes an element or elementscomposing a material. For example, and without limitation, in a CoFeBmaterial, each of Co, Fe, and B may be referred to as species of theCoFeB material.

As used herein, the term “diffusible species” means and includes achemical species of a material the presence of which in the material isnot necessary for the functionality of the material. For example, andwithout limitation, in a CoFeB material of a magnetic region, B (boron)may be referred to as a diffusible species to the extent that thepresence of B with Co and Fe is not necessary for the Co and Fe tofunction as a magnetic material (i.e., to exhibit magnetism). Followingdiffusion, the “diffusible species” may be referred to as a “diffusedspecies.”

As used herein, the term “fixed region” means and includes a magneticregion within the STT-MRAM cell that includes a magnetic material andthat has a fixed magnetic orientation during use and operation of theSTT-MRAM cell in that a current or applied field effecting a change inthe magnetization direction of one magnetic region (e.g., the freeregion) of the cell core may not effect a change in the magnetizationdirection of the fixed region. The fixed region may include one or moremagnetic materials and, optionally, one or more non-magnetic materials.For example, the fixed region may be configured as a syntheticantiferromagnet (SAF) including a sub-region of ruthenium (Ru) adjoinedby magnetic sub-regions. Each of the magnetic sub-regions may includeone or more materials and one or more regions therein. As anotherexample, the fixed region may be configured as a single, homogeneousmagnetic material. Accordingly, the fixed region may have uniformmagnetization, or sub-regions of differing magnetization that, overall,effect the fixed region having a fixed magnetic orientation during useand operation of the STT-MRAM cell.

As used herein, the term “free region” means and includes a magneticregion within the STT-MRAM cell that includes a magnetic material andthat has a switchable magnetic orientation during use and operation ofthe STT-MRAM cell. The magnetic orientation may be switched between aparallel configuration and an anti-parallel configuration by theapplication of a current or applied field.

As used herein, “switching” means and includes a stage of use andoperation of the memory cell during which programming current is passedthrough the magnetic cell core of the STT-MRAM cell to effect a parallelor anti-parallel configuration of the magnetic orientations of the freeregion and the fixed region.

As used herein, “storage” means and includes a stage of use andoperation of the memory cell during which programming current is notpassed through the magnetic cell core of the STT-MRAM cell and in whichthe parallel or anti-parallel configuration of the magnetic orientationsof the free region and the fixed region is not purposefully altered.

As used herein, the term “vertical” means and includes a direction thatis perpendicular to the width and length of the respective region.“Vertical” may also mean and include a direction that is perpendicularto a primary surface of the substrate on which the STT-MRAM cell islocated.

As used herein, the term “horizontal” means and includes a directionthat is parallel to at least one of the width and length of therespective region. “Horizontal” may also mean and include a directionthat is parallel to a primary surface of the substrate on which theSTT-MRAM cell is located.

As used herein, the term “sub-region,” means and includes a regionincluded in another region. Thus, one magnetic region may include one ormore magnetic sub-regions, i.e., sub-regions of magnetic material, aswell as non-magnetic sub-regions, i.e., sub-regions of non-magneticmaterial.

As used herein, the term “base,” when referring to a region or material,means and includes the lowest-most region or material of an identifiedplurality of such regions or materials. For example, the “base magneticregion” refers to the lowest magnetic region compared to otheridentified magnetic regions.

As used herein, the term “between” is a spatially relative term used todescribe the relative disposition of one material, region, or sub-regionrelative to at least two other materials, regions, or sub-regions. Theterm “between” can encompass both a disposition of one material, region,or sub-region directly adjacent to the other materials, regions, orsub-regions and a disposition of one material, region, or sub-regionindirectly adjacent to the other materials, regions, or sub-regions.

As used herein, the term “proximate to” is a spatially relative termused to describe disposition of one material, region, or sub-region nearto another material, region, or sub-region. The term “proximate”includes dispositions of indirectly adjacent to, directly adjacent to,and internal to.

As used herein, reference to an element as being “on” or “over” anotherelement means and includes the element being directly on top of adjacentto, underneath, or in direct contact with the other element. It alsoincludes the element being indirectly on top of adjacent to, underneath,or near the other element, with other elements present therebetween. Incontrast, when an element is referred to as being “directly on” or“directly adjacent to” another element, there are no interveningelements present.

As used herein, other spatially relative terms, such as “beneath,”“below,” “lower,” “bottom,” “above,” “upper,” “top,” “front,” “rear,”“left,” “right,” and the like, may be used for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the figures. Unless otherwise specified,the spatially relative terms are intended to encompass differentorientations of the materials in addition to the orientation as depictedin the figures. For example, if materials in the figures are inverted,elements described as “below” or “beneath” or “under” or “on bottom of”other elements or features would then be oriented “above” or “on top of”the other elements or features. Thus, the term “below” can encompassboth an orientation of above and below, depending on the context inwhich the term is used, which will be evident to one of ordinary skillin the art. The materials may be otherwise oriented (rotated 90 degrees,inverted, etc.) and the spatially relative descriptors used hereininterpreted accordingly.

As used herein, the terms “comprises,” “comprising,” “includes,” and/or“including” specify the presence of stated features, regions, integers,stages, operations, elements, materials, components, and/or groups, butdo not preclude the presence or addition of one or more other features,regions, integers, stages, operations, elements, materials, components,and/or groups thereof.

As used herein, “and/or” includes any and all combinations of one ormore of the associated listed items.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

The illustrations presented herein are not meant to be actual views ofany particular component, structure, device, or system, but are merelyidealized representations that are employed to describe embodiments ofthe present disclosure.

Embodiments are described herein with reference to cross-sectionalillustrations that are schematic illustrations. Accordingly, variationsfrom the shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,embodiments described herein are not to be construed as limited to theparticular shapes or regions as illustrated but may include deviationsin shapes that result, for example, from manufacturing techniques. Forexample, a region illustrated or described as box-shaped may have roughand/or nonlinear features. Moreover, sharp angles that are illustratedmay be rounded. Thus, the materials, features, and regions illustratedin the figures are schematic in nature and their shapes are not intendedto illustrate the precise shape of a material, feature, or region and donot limit the scope of the present claims.

The following description provides specific details, such as materialtypes and processing conditions, in order to provide a thoroughdescription of embodiments of the disclosed devices and methods.However, a person of ordinary skill in the art will understand that theembodiments of the devices and methods may be practiced withoutemploying these specific details. Indeed, the embodiments of the devicesand methods may be practiced in conjunction with conventionalsemiconductor fabrication techniques employed in the industry.

The fabrication processes described herein do not form a completeprocess flow for processing semiconductor device structures. Theremainder of the process flow is known to those of ordinary skill in theart. Accordingly, only the methods and semiconductor device structuresnecessary to understand embodiments of the present devices and methodsare described herein.

Unless the context indicates otherwise, the materials described hereinmay be formed by any suitable technique including, but not limited to,spin coating, blanket coating, chemical vapor deposition (“CVD”), atomiclayer deposition (“ALD”), plasma enhanced ALD, physical vapor deposition(“PVD”), or epitaxial growth. Depending on the specific material to beformed, the technique for depositing or growing the material may beselected by a person of ordinary skill in the art.

Unless the context indicates otherwise, the removal of materialsdescribed herein may be accomplished by any suitable techniqueincluding, but not limited to, etching, ion milling, abrasiveplanarization, or other known methods.

Reference will now be made to the drawings, where like numerals refer tolike components throughout. The drawings are not necessarily drawn toscale.

A memory cell is disclosed. The memory cell includes a magnetic cellcore that includes an attracter material proximate to a magnetic region(e.g., the free region). The free region is located between two oxideregions (e.g., MA-inducing regions), at least one of which may functionas a tunnel barrier. The attracter material has a higher chemicalaffinity for a diffusible species of a magnetic material from which themagnetic region is formed, compared to a chemical affinity between thediffusible species and at least one other species of the magneticmaterial. Therefore, the attracter material is formulated to attract andremove from the magnetic material the diffusible species. The removal ofthe diffusible species may enable and improve crystallization of themagnetic region, which crystallization, along with other configurationsof the magnetic region, may enable formation of a free region with ahigh MA strength, a high TMR, a high energy barrier and energy barrierratio, and a high exchange stiffness.

FIG. 1 illustrates an embodiment of a magnetic cell structure 100according to the present disclosure. The magnetic cell structure 100includes a magnetic cell core 101 over a substrate 102. The magneticcell core 101 may be disposed between an upper electrode 104 above and alower electrode 105 below. The magnetic cell core 101 includes at leasttwo magnetic regions, for example, a “fixed region” 110 and a “freeregion” 120 with an intermediate oxide region 130 between. Either orboth of the fixed region 110 and the free region 120 may be formedhomogeneously or, optionally, may be formed to include more than onesub-region (see. FIG. 5, discussed further below). The intermediateoxide region 130 may be configured as a tunnel region and may contactthe fixed region 110 along interface 131 and may contact the free region120 along interface 132.

One or more lower intermediary regions 140 may, optionally, be disposedunder the magnetic regions (e.g., the fixed region 110 and the freeregion 120), and one or more upper intermediary regions 150 may,optionally, be disposed over the magnetic regions of the magnetic cellstructure 100. The lower intermediary regions 140 and the upperintermediary regions 150, if included, may be configured to inhibitdiffusion of species between the lower electrode 105 and overlyingmaterials and between the upper electrode 104 and underlying materials,respectively, during operation of the memory cell.

The magnetic cell core 101 may include a foundation region 160 over thesubstrate 102. The foundation region 160 may provide a smooth templateupon which overlying materials are formed. In some embodiments, thefoundation region 160 may be formed directly on the lower electrode 105.In other embodiments, such as that illustrated in FIG. 1, the foundationregion 160 may be formed on the one or more lower intermediary regions140.

A secondary oxide region 170 is formed proximate to the free region 120,e.g., adjacent to a surface of the free region 120 that is opposite asurface of the free region 120 proximate to the intermediate oxideregion 130. Thus, the secondary oxide region 170 may be spaced from theintermediate oxide region 130 by the free region 120.

In some embodiments, such as that illustrated in FIG. 1, the secondaryoxide region 170 may be formed over (e.g., directly on) the foundationregion 160, such that an upper surface of the foundation region 160 anda lower surface of the secondary oxide region 170 may contact oneanother. In some embodiments, the foundation region 160 is formulatedand configured to enable formation of the secondary oxide region 170 tohave a crystal structure that enables formation of the free region 120,over the secondary oxide region 170, with a desired crystal structure(e.g., a bcc (001) crystalline structure).

The free region 120 is formed proximate to (e.g., over) the secondaryoxide region 170, and an attracter region 180 may be formed proximate tothe free region 120. In some embodiments, the attracter region 180 maybe between the secondary oxide region 170 and the free region 120. Theattracter region 180 may be thin (e.g., less than about 6 Å (less thanabout 0.6 nm) in height, e.g., less than about 4 Å (less than about 0.4nm) in height, e.g., about 3 Å (about 0.3 nm) in height). In someembodiments, the attracter region 180 may be discontinuous (i.e., mayhave gaps between material of the region). In other embodiments, theattracter region 180 may be continuous (i.e., without gaps in thematerial of the region). In some embodiments, the attracter region 180and the secondary oxide region 170 may be integrated with one another asan attracter oxide region 178, as illustrated in FIG. 1B. Accordingly, asurface of the free region 120 may not interface solely with thesecondary oxide region 170. Rather, the surface of the free region 120may neighbor the secondary oxide region 170 with the attracter region180 in proximity therewith.

In other embodiments, which are not illustrated, the attracter region180 may be formed proximate to the free region 120 without beingdisposed between the free region 120 and the secondary oxide region 170.For example, the attracter region 180 may be formed to laterallysurround, at least in part, the free region 120.

The attracter region 180 may be physically isolated from the fixedregion 110 by one or more regions, e.g., by the free region 120 and theintermediate oxide region 130. Therefore, components of the attracterregion 180 may not chemically react with the fixed region 110.

In some embodiments, the memory cells of embodiments of the presentdisclosure may be configured as either in-plane STT-MRAM cells orout-of-plane STT-MRAM cells. “In-plane” STT-MRAM cells include magneticregions exhibiting a magnetic origination that is predominantly orientedin a horizontal direction, while “out-of-plane” STT-MRAM cells, includemagnetic regions exhibiting a magnetic orientation that is predominantlyoriented in a vertical direction. For example, as illustrated in FIG. 1,the STT-MRAM cell may be configured to exhibit a vertical magneticorientation in at least one of the magnetic regions (e.g., the fixedregion 110 and the free region 120). The vertical magnetic orientationexhibited may be characterized by perpendicular magnetic anisotropy(“PMA”) strength. As illustrated in FIG. 1 by arrows 112 anddouble-pointed arrows 122, in some embodiments, each of the fixed region110 and the free region 120 may exhibit a vertical magnetic orientation.The magnetic orientation of the fixed region 110 may remain directed inessentially the same direction throughout operation of the STT-MRAMcell, for example, in the direction indicated by arrows 112 of FIG. 1.The magnetic orientation of the free region 120, on the other hand, maybe switched, during operation of the cell, between a parallelconfiguration and an anti-parallel configuration, as indicated bydouble-pointed arrows 122 of FIG. 1.

Though in some embodiments, such as that of FIG. 1, the secondary oxideregion 170 may underlay the free region 120, in other embodiments, suchas that of FIG. 1C, the secondary oxide region 170 may overlay the freeregion 120. For example, and without limitation, in FIG. 1C, illustratedis a magnetic cell structure 100′ having a magnetic cell core 101′ inwhich the fixed region 110 overlays the lower electrode 105 and, ifpresent, the lower intermediary regions 140. The foundation region 160(not illustrated in FIG. 1C) may, optionally, be included between, e.g.,the lower electrode 105 (or the lower intermediary regions 140, ifpresent) and the fixed region 110. The magnetic cell core 101′ alsoincludes the intermediate oxide region 130 over the fixed region 110,the free region 120 over the intermediate oxide region 130, and thesecondary oxide region 170 over the free region 120, with the attracterregion 180 between the secondary oxide region 170 and the free region120. In some such embodiments, the attracter region 180 may beincorporated with the secondary oxide region 170, e.g., either as asub-region of the secondary oxide region 170 or as an attracter oxideregion 178 (FIG. 1B). The upper electrode 104 and, if present, the upperintermediary regions 150 may overlay the secondary oxide region 170.Accordingly, in any of the embodiments described herein, thedispositions of the fixed region 110, the intermediate oxide region 130,the free region 120, and the secondary oxide region 170 may berespectively turned, which turning would nonetheless dispose the freeregion 120 between the intermediate oxide region 130 and the secondaryoxide region 170, and the attracter region 180 would nonetheless beproximate to the free region 120.

With reference to FIGS. 2 through 5, illustrated are stages in a methodof fabricating magnetic cell structures, such as the magnetic cellstructure 100 of FIG. 1. As illustrated in FIG. 2, a structure 200 maybe formed, from bottom to top, with a conductive material 205 formedover the substrate 102, a foundation material 260 over the conductivematerial 205, an oxide material 270 over the foundation material 260, amagnetic material 220 over the oxide material 270, another oxidematerial 230 over the magnetic material 220, and another magneticmaterial 214 over the another oxide material 230. Optionally, a lowerintermediary material 240 may be formed over the conductive material205, before forming the foundation material 260 thereover. An attractermaterial 280 is formed proximate to the magnetic material 220. Forexample, according to the embodiment illustrated in FIG. 2, theattracter material 280 may be formed over the oxide material 270, beforeforming the magnetic material 220 thereover.

The conductive material 205, from which the lower electrode 105 (FIGS. 1and 1C) is formed, may comprise, consist essentially of, or consist of,for example and without limitation, a metal (e.g., copper, tungsten,titanium, tantalum), a metal alloy, or a combination thereof.

In embodiments in which the optional lower intermediary region 140(FIGS. 1 and 1C) is formed over the lower electrode 105, the lowerintermediary material 240, from which the lower intermediary region 140is formed, may comprise, consist essentially of, or consist of, forexample and without limitation, tantalum (Ta), titanium (Ti), tantalumnitride (TaN), titanium nitride (TiN), ruthenium (Ru), tungsten (W), ora combination thereof. In some embodiments, the lower intermediarymaterial 240, if included, may be incorporated with the conductivematerial 205 from which the lower electrode 105 (FIGS. 1 and 1C) is tobe formed. For example, the lower intermediary material 240 may be anupper-most sub-region of the conductive material 205.

The foundation material 260 may comprise, consist essentially of, orconsist of, for example and without limitation, a material comprising atleast one of cobalt (Co) and iron (Fe) (e.g., a CoFeB material), amaterial comprising a nonmagnetic material (e.g., a nonmagneticconductive material (e.g., a nickel-based material)), or a combinationthereof. The foundation material 260 may be formulated and configured toprovide a template that enables forming the oxide material 270 thereoverat a desired crystalline structure (e.g., a bcc (001) crystallinestructure).

The oxide material 270, from which the secondary oxide region 170 (FIGS.1 and 1C) is formed, may comprise, consist essentially of or consist of,for example and without limitation, a nonmagnetic oxide material (e.g.,magnesium oxide (MgO), aluminum oxide (Al₂O₃), titanium oxide (TiO₂), orother oxide materials of conventional MTJ regions). The oxide material270 may be formed (e.g., grown, deposited) directly on the foundationmaterial 260. In embodiments in which the foundation material 260 isamorphous when initially formed, the resulting oxide material 270 may becrystalline (e.g., have a bcc (001) crystalline structure) wheninitially formed over the foundation material 260.

The magnetic material 220, from which the free region 120 (FIGS. 1 and1C) is foil red, may comprise, consist essentially of, or consist of,for example and without limitation, ferromagnetic material includingcobalt (Co) and iron (Fe) (e.g. Co_(x)Fe_(y), wherein x=10 to 80 andy=10 to 80) and, in some embodiments, also boron (B) (e.g.,Co_(x)Fe_(y)B_(z), wherein x=10 to 80, y=10 to 80, and z=0 to 50). Thus,the magnetic material 220 may comprise at least one of Co, Fe, and B(e.g., a CoFeB material). In some embodiments, the magnetic material 220may comprise the same material as the foundation material 260 or amaterial having the same elements as the foundation material 260, thoughwith different atomic ratios of those elements. The magnetic material220 may be formed as a homogeneous region. In other embodiments, themagnetic material 220 may include one or more sub-regions, e.g., ofCoFeB material, with the sub-regions having different relative atomicratios of Co, Fe, and B.

The magnetic material 220 includes at least one diffusible species andat least one other species. The presence of the diffusible species isnot necessary for the magnetic material 220 to exhibit magnetism.Moreover, the presence of the diffusible species in the magneticmaterial 220 may inhibit crystallization of the magnetic material 220.For example, in embodiments in which the magnetic material 220 is aCoFeB material, the boron (B) may be the diffusible species. Thepresence of boron in the magnetic material 220 may inhibit the magneticmaterial 220 from being crystallized (e.g., during a subsequent anneal)to a desired crystalline structure (e.g., a bcc (001) crystallinestructure).

The attracter material 280, which, in some embodiments, may be aconductive material, may be formulated to have a higher chemicalaffinity for the diffusible species of the magnetic material 220 thanthe chemical affinity of the other species of the magnetic material 220for the diffusible species. For example, and without limitation, inembodiments in which the magnetic material 220 is a CoFeB material, theattracter material 280 may comprise, consist essentially of, or consistof tantalum (Ta), tungsten (W), hafnium (Ha), zirconium (Zr), one ormore compounds thereof, or one or more combinations thereof. Suchattracter material 280 may have a higher chemical affinity for a borondiffusible species from the CoFeB magnetic material 220 compared to thechemical affinity between boron and the other species of the CoFeBmagnetic material 220 (i.e., cobalt and iron).

Because the attracter material 280 has a higher chemical affinity forthe diffusible species compared to the other species of the magneticmaterial 220, the proximity of the attracter material 280 to themagnetic material 220 may enable removal of the diffusible species fromthe magnetic material 220. For example, the diffusible species maydiffuse into the attracter material 280 and may chemically bond to theattracter material 280. This removal of the diffusible species from themagnetic material 220 by the attracter material 280 may occur byannealing the structure 200 to form an annealed structure 300, asillustrated in FIG. 3. In the annealed structure 300, the magneticmaterial 220 (FIG. 2) may, therefore, be converted to a depletedmagnetic material 320. As used herein, the term “depleted,” when used todescribe a material, describes a material from which the diffusiblespecies has been removed. Correspondingly, the attracter material 280(FIG. 2) may be configured to be an enriched attracter material 380. Asused herein, the term “enriched material,” when used to describe amaterial, describes a material to which the diffusible species has beenadded (e.g., transferred). Therefore, a region of the enriched attractermaterial 380 comprises the attracter material 280 (FIG. 2) and thediffused species.

For example, and without limitation, in embodiments in which themagnetic material 220 (FIG. 2) is a CoFeB material, the depletedmagnetic material 320 may be a CoFe material (i.e., a magnetic materialcomprising cobalt and iron). In such embodiments in which the attractermaterial 280 (FIG. 2) is tantalum, the enriched material 380 may be amixture of tantalum and boron. Without being restricted to any onetheory, it is contemplated that removing the diffusible species of boronfrom the CoFeB magnetic material 220 may enable crystallization of thedepleted magnetic material 320 at a lower anneal temperature than thecrystallization temperature of the magnetic material 220 (FIG. 2). Thedepleted magnetic material 320 may, therefore, be crystallized into adesired crystalline structure (e.g., a bcc (001) crystalline structure)that enables formation of the free region 120 (FIG. 1) to a desiredthickness without suffering from substantial structure defects, to havea high TMR, and to have a high energy barrier and energy barrier ratio.Achieving these properties with a continuous magnetic region disposedbetween two oxide regions also enables the free region 120 to have ahigh exchange stiffness and high MA strength.

While the free region 120 (FIGS. 1 and 1C) is formed from the magneticmaterial 220 (e.g., a CoFeB material) that comprises the diffusiblespecies, the free region 120 of the fabricated, magnetic cell core 101(FIG. 1) (or the magnetic cell core 101′ (FIG. 1C)) may comprisesubstantially less of the diffusible species (e.g., the boron (B)).Rather, the attracter region 180 (FIGS. 1 and 1C) of the fabricated,magnetic cell core 101 may comprise both the attracter material 280 andthe diffusible species (e.g., the boron (B)) that has diffused from themagnetic material 220. Thus, unless the context indicates otherwise, asused herein, when describing a region “aimed from” a material, the“material” means and includes the substance of the region prior to atransformative act (e.g., diffusion) during fabrication.

The attracter material 280 may also be formulated such that an oxidethereof effects an inducement of MA with the free region 120 (FIGS. 1and 1C). That is, while the diffusible species from the magneticmaterial 220 (FIG. 2) may react with (e.g., chemically bond to) theattracter material 280, the attracter material 280 may also react with(e.g., chemically bond to) oxygen from the oxide material 270. Inembodiments in which the attracter material 280 is formulated such thatan oxide thereof induces MA with the free region 120 (FIGS. 1 and 1C),the oxide of the attracter material 280 may enhance the MA inducedbetween the secondary oxide region 170 and the free region 120, ratherthan degrade the MA inducement.

The another oxide material 230, from which the intermediate oxide region130 (FIGS. 1 and 1C) is formed, may comprise, consist essentially of, orconsist of, for example and without limitation, a nonmagnetic oxidematerial (e.g., magnesium oxide (MgO), aluminum oxide (Al₂O₃), titaniumoxide (TiO₂), or other oxide materials of conventional MTJ regions). Theanother oxide material 230 may be the same material as oxide material270 or a material comprising the same elements as the oxide material 270though with different atomic ratios thereof. For example, and withoutlimitation, both of the another oxide material 230 and the oxidematerial 270 may comprise MgO. The another oxide material 230 may beformed (e.g., grown, deposited) directly on the magnetic material 220.The another oxide material 230 may be amorphous when initially formed.

In some embodiments, such as that illustrated in FIGS. 2 and 3, theanother magnetic material 214, from which at least a portion of thefixed region 110 (FIGS. 1 and 1C) is formed, may be formed (e.g., grown,deposited) directly on the another oxide material 230. The anothermagnetic material 214 may comprise, consist essentially of, or consistof, for example and without limitation, ferromagnetic material includingcobalt (Co) and iron (Fe) (e.g. Co_(x)Fe_(y), wherein x=10 to 80 andy=10 to 80) and, in some embodiments, also boron (B) (e.g.,Co_(x)Fe_(y)B_(z), wherein x=10 to 80, y=10 to 80, and z=0 to 50). Thus,the another magnetic material 214 may comprise a CoFeB material. In someembodiments, the another magnetic material 214 may be the same materialas either or both of magnetic material 220 and foundation material 260or a material having the same elements, though in different atomicratios.

In annealing the structure 200 of FIG. 2 to form the annealed structure300 of FIG. 3, at least the magnetic material 220 (FIG. 2) of the freeregion 120 (FIGS. 1 and 1C) may be crystallized into a desired crystalstructure (e.g., a bcc (001) crystalline structure), whichcrystallization may be promoted by the removal of the diffusible speciesfrom the magnetic material 220 (FIG. 2) due to the chemical affinitythereof by the attracter material 280 (FIG. 2). Thus, at least thedepleted magnetic material 320 (FIG. 3) may have a desired crystallinestructure. Other materials of the annealed structure 300 may also becrystallized due to annealing. During annealing, without being limitedto any particular theory, it is contemplated that the crystallinestructure of e.g., the oxide material 270, the another oxide material230, or both, may propagate to neighboring amorphous materials, such as,e.g., the magnetic material 220 and the another magnetic material 214.Thus, annealing may alter the crystalline structure of one or morematerials of the structure 200 (FIG. 2), such as the magnetic material220. The annealing process may be conducted at an annealing temperatureof from about 300° C. to about 600° C. (e.g., about 400° C.) and may beheld at the annealing temperature for from about one minute (about 1min.) to about one hour (about 1 hr.). The annealing temperature andtime may be tailored based on the materials of the structure 200, thedesired crystal structure of, e.g., the magnetic material 220, and adesired amount of depletion of the diffusible species from the magneticmaterial 220.

After formation of the structure 200 and, if an anneal is performed,after formation of the annealed structure 300, the remaining materialsof the magnetic cell structure may be fabricated to form a precursorstructure 400, as illustrated in FIG. 4. For example, another fixedregion material 416 may be formed over the another magnetic material214. The another fixed region material 416 may comprise, consistessentially of, or consist of cobalt/palladium (Co/Pd)multi-sub-regions; cobalt/platinum (Co/Pt) multi-sub-regions; cobaltiron terbium (Co/Fe/Tb) based materials, L₁0 materials, couplermaterials, or other magnetic materials of conventional fixed regions.Thus, the fixed region 110 (FIGS. 1 and 1C) may include the anotherfixed region material 416 in addition to the another magnetic material214.

In some embodiments, optionally, one or more upper intermediarymaterials 450 may be formed over the another fixed region material 416.The upper intermediary materials 450, which, if included, form theoptional upper intermediary regions 150 (FIGS. 1 and 1C), may comprise,consist essentially of, or consist of materials configured to ensure adesired crystal structure in neighboring materials. The upperintermediary materials 450 may alternatively or additionally includemetal materials configured to aid in patterning processes duringfabrication of the magnetic cell, barrier materials, or other materialsof conventional STT-MRAM cell core structures. In some embodiments, theupper intermediary material 450 may include a conductive material (e.g.,one or more materials such as copper, tantalum, titanium, tungsten,ruthenium, tantalum nitride, or titanium nitride) to be formed into aconductive capping region.

A conductive material 404, from which the upper electrode 104 (FIGS. 1and 1C) may be formed, may be formed over the another fixed regionmaterial 416 and, if present, the upper intermediary materials 450. Insome embodiments, the conductive material 204 and the upper intermediarymaterials 450, if present, may be integrated with one another, e.g.,with the upper intermediary materials 450 being lower sub-regions of theconductive material 404.

The precursor structure 400 may then be patterned, in one or morestages, to form a magnetic cell structure 500, as illustrated in FIG. 5.Techniques for patterning structures such as the precursor structure 400(FIG. 4) to form structures such as the magnetic cell structure 500 areknown in the art and so are not described herein in detail.

After patterning, the magnetic cell structure 500 includes a magneticcell core 501 having a fixed region 510 comprising one sub-region (e.g.,a lower fixed region 514), formed from the another magnetic material 214(which may have been annealed and crystallized), and another sub-region(e.g., an upper fixed region 516), formed from the another fixed regionmaterial 416 (which may not have been annealed). The magnetic cell core501 also includes the attracter region 180 proximate to the free region120. The free region 120, including the depleted magnetic material 320(FIG. 4) and formed from the magnetic material 220 (FIG. 2), comprises alower concentration of the diffusible species than a free region formedfrom the magnetic material 220 (FIG. 2) without the attracter region 180proximate thereto.

In some embodiments, the free region 120 may be completely depleted ofthe diffusible species. In other embodiments, the free region 120 may bepartially depleted of the diffusible species. In such embodiments, thefree region 120 may have a gradient of the diffusible species (e.g.,boron) therethrough, with a low concentration of the diffusible speciesadjacent to the attracter region 180 and a high concentration of thediffusible species opposite the attracter region 180. The concentrationof the diffusible species may, in some embodiments, equilibrate after orduring anneal.

The free region 120, for red with a crystalline, depleted magneticmaterial 320 (FIG. 4) may have a desired crystalline structure that maybe substantially free of defects, due, at least in part, to the removalof the diffusible species (FIG. 3). The crystallinity of the free region120 may enable the free region 120 of the magnetic cell structure 500 tobe formed to a thickness that effects a high TMR and a high energybarrier and energy barrier ratio (Eb/kT). Moreover, the crystallinity ofthe free region 120, if consisting of magnetic material (e.g., thedepleted magnetic material 320 (FIG. 4)) may also have a high exchangestiffness. Furthermore, in the magnetic cell core 501, the proximity ofthe free region 120 to two nonmagnetic regions (i.e., the secondaryoxide region 170 and the intermediate oxide region 130), which may beformulated to be MA-inducing regions, at the upper and lower surfaces ofthe free region 120 may induce magnetic anisotropy (“MA”) at bothsurfaces. MA may be induced along the surface of the free region 120proximate to the secondary oxide region 170, even with the attracterregion 180 disposed between the free region 120 and the secondary oxideregion 170. The amount of attracter material 280 (FIG. 2) used to formthe attracter region 180 may be tailored to be of an amount substantialenough to effect removal of at least some of the diffusible species fromthe magnetic material 220 (FIG. 2) while also being an amount not sosubstantial as to inhibit MA inducement between the secondary oxideregion 170 and the free region 120.

In one embodiment, the magnetic cell structure 500 includes thefoundation region 160 formed from a CoFeB material, the secondary oxideregion 170 formed from MgO, the free region 120 formed from a CoFeBmaterial, the attracter region 180 formed from tantalum (Ta), theintermediate oxide region 130 formed from MgO, and at least the lowerfixed region 514 formed from a CoFeB material. The attracter region 180may be enriched with boron, the diffusible species of the CoFeB materialof the free region 120, and the free region 120 may be at leastpartially depleted of boron. Therefore, the free region 120 has a lowerconcentration of boron compared to the magnetic material from which itwas originally formed (i.e., the CoFeB material) and may have a lowerconcentration of boron compared to that of the lower fixed region 514,the foundation region 160, or both. The free region 120 may have a bcc(001) crystalline structure, a high TMR (e.g., greater than about 0.40(greater than about 40%), e.g., greater than about 1.0 (greater thanabout 100%)), a high MA strength (e.g., at least about 1500 Oe (at leastabout 119 kA/m), e.g., greater than about 2000 Oe (about 160 kA/m),e.g., greater than about 2200 Oe (about 175 kA/m)), and high exchangestiffness.

In other embodiments, the secondary oxide region 170, the free region120, the intermediate oxide region 130, and the fixed region 110 may bedisposed in a different relation to the substrate 102. For example,they, along with the attracter region 180, may be inverted as in themagnetic cell structure 100′ of FIG. 1C. A method to form the magneticcell structure 100′ of FIG. 1C, may, therefore, include forming aprecursor structure including, from bottom to top, the conductivematerial 205 (FIG. 2) over the substrate 102, the another magneticmaterial 214 (FIG. 2) over the conductive material 205, the anotheroxide material 230 (FIG. 2) over the another magnetic material 214, themagnetic material 220 (FIG. 2) over the another oxide material 230, theattracter material 280 (FIG. 2) over the magnetic material 220, and theoxide material 270 (FIG. 2) over the attracter material 280. In someembodiments, forming the another magnetic material 214 may be precededor followed by forming the another fixed region material 416 (FIG. 4).Optionally, the upper intermediary materials 450 (FIG. 4) may be formedover the oxide material 270. The conductive material 404 (FIG. 4) may beformed over the other materials. The precursor structure may be annealedbefore or after patterning to form the magnetic cell core 101′ (FIG. 1).The annealing may promote transfer of the diffusible species from themagnetic material 220 (FIG. 2) to the attracter material 280 (FIG. 2),thus forming the depleted magnetic material 320 (FIG. 3) and theenriched attracter material 380 (FIG. 3). In such an embodiment, thediffusible species transfers upwards, and the enriched attractermaterial 380 overlays the depleted magnetic material 320.

Accordingly, disclosed is a memory cell comprising a magnetic cell core.The magnetic cell core comprises a magnetic region exhibiting aswitchable magnetic orientation and formed from a magnetic materialcomprising a diffusible species and at least one other species. Themagnetic cell core also comprises another magnetic region exhibiting afixed magnetic orientation. An intermediate oxide region is between themagnetic region and the another magnetic region. Another oxide region isspaced from the intermediate oxide region by the magnetic region. Anattracter material is proximate to the magnetic region. A chemicalaffinity of the attracter material for the diffusible species is higherthan a chemical affinity of the at least one other species for thediffusible species.

With reference to FIGS. 6 through 12, illustrated are stages in analternate method of forming a magnetic cell according to an embodimentof the present disclosure. As illustrated in FIG. 6, a structure 600 maybe formed to include, over the substrate 102 and from bottom to top, theconductive material 205, optionally the lower intermediary material 240,the foundation material 260, a base precursor material 670, and theattracter material 280. The base precursor material 670 may be anot-yet-oxidized material. For example, the base precursor material 670may comprise, consist essentially of, or consist of magnesium (Mg),aluminum (Al), titanium (Ti), or another metal that, once oxidized, maybe formulated to induce MA with the free region 120 (FIG. 1).

The structure 600 may be exposed to an oxidizing environment to formstructure 700 of FIG. 7, wherein arrows 708 indicate exposure to theoxidizing environment. Following the oxidation, the base precursormaterial 670 and the attracter material 280, in structure 800 of FIG. 8,may be converted into an attracter oxide material 878. Thus, as in FIG.1B, the secondary oxide region 170 (FIG. 1) and the attracter region 180(FIG. 1) may be integrated with one another as the attracter oxideregion 178 (FIG. 1B) formed from the attracter oxide material 878.Again, the attracter oxide material 878 may be formulated to have ahigher chemical affinity for the diffusible species of the magneticmaterial 220 (FIG. 2) than a chemical affinity between the diffusiblespecies and another species of the magnetic material 220.

After forming the attracter oxide material 878, the other lower-mostmaterials of a magnetic cell structure to be formed may be formed overthe attracter oxide material 878. For example, as illustrated in FIG. 9,the magnetic material 220, the another oxide material 230, and theanother magnetic material 214 may be formed, sequentially and frombottom to top, over the attracter oxide material 878 to form structure900.

The structure 900 may then be annealed to form annealed structure 1000of FIG. 10, including the depleted magnetic material 320 and an enrichedattracter oxide material 1078. Annealing may promote diffusion of thediffusible species from the magnetic material 220 (FIG. 9) to form thedepleted magnetic material 320 and the enriched attracter oxide material1078. The removal of the diffusible species from the magnetic material220 (FIG. 9) may enable crystallization of the magnetic material 220 toform the depleted magnetic material 320 at a desired crystallinestructure (e.g., a bcc (001) crystalline structure).

The upper-most materials of a precursor structure 1100, as illustratedin FIG. 11, may then be formed over the another magnetic material 214.Such materials may include, for example, the another fixed regionmaterial 416, optionally the upper intermediary material 450, and theanother conductive material 404. The precursor structure 1100 may thenbe patterned to form a magnetic cell structure 1200, as illustrated inFIG. 12. The magnetic cell structure 1200 includes a magnetic cell core1201 that includes the attracter oxide region 178 comprising theenriched attracter oxide material 1078 (FIG. 11), formed from theattracter oxide material 878 (FIG. 9). The magnetic cell structure 1200may, therefore, have a high TMR, a high energy barrier and energybarrier ratio, high exchange stiffness in the free region 120, and highMA strength.

Accordingly, disclosed is a method of forming a magnetic memory cell,the method comprising forming a precursor structure. Forming theprecursor structure comprises forming a magnetic material between anoxide material and another oxide material. The magnetic materialexhibits a switchable magnetic orientation. An attracter material isformed proximate to the magnetic material. The attracter material has achemical affinity for a diffusible species of the magnetic material. Thediffusible species is transferred from the magnetic material to theattracter material. A magnetic cell core structure is formed from theprecursor structure.

With reference to FIG. 13, illustrated is an STT-MRAM system 1300 thatincludes peripheral devices 1312 in operable communication with anSTT-MRAM cell 1314, a grouping of which may be fabricated to form anarray of memory cells in a grid pattern including a number of rows andcolumns, or in various other arrangements, depending on the systemrequirements and fabrication technology. The STT-MRAM cell 1314 includesa magnetic cell core 1302, an access transistor 1303, a conductivematerial that may function as a data/sense line 1304 (e.g., a bit line),a conductive material that may function as an access line 1305 (e.g., aword line), and a conductive material that may function as a source line1306. The peripheral devices 1312 of the STT-MRAM system 1300 mayinclude read/write circuitry 1307, a bit line reference 1308, and asense amplifier 1309. The cell core 1302 may be any one of the magneticcell cores (e.g., the magnetic cell core 101 (FIG. 1), the magnetic cellcore 101′ (FIG. 1C), the magnetic cell core 501 (FIG. 5), the magneticcell core 1201 (FIG. 12)) described above. Due to the structure of thecell core 1302, the method of fabrication, or both, the STT-MRAM cell1314 may have a high TMR, a high energy barrier and energy barrier ratio(Eb/kT), a free region with high exchange stiffness, and a high MAstrength.

In use and operation, when an STT-MRAM cell 1314 is selected to beprogrammed, a programming current is applied to the STT-MRAM cell 1314,and the current is spin-polarized by the fixed region of the cell core1302 and exerts a torque on the free region of the cell core 1302, whichswitches the magnetization of the free region to “write to” or “program”the STT-MRAM cell 1314. In a read operation of the STT-MRAM cell 1314, acurrent is used to detect the resistance state of the cell core 1302.

To initiate programming of the STT-MRAM cell 1314, the read/writecircuitry 1307 may generate a write current (i.e., a programmingcurrent) to the data/sense line 1304 and the source line 1306. Thepolarity of the voltage between the data/sense line 1304 and the sourceline 1306 determines the switch in magnetic orientation of the freeregion in the cell core 1302. By changing the magnetic orientation ofthe free region with the spin polarity, the free region is magnetizedaccording to the spin polarity of the programming current, theprogrammed logic state is written to the STT-MRAM cell 1314.

To read the STT-MRAM cell 1314, the read/write circuitry 1307 generatesa read voltage to the data/sense line 1304 and the source line 1306through the cell core 1302 and the access transistor 1303. Theprogrammed state of the STT-MRAM cell 1314 relates to the electricalresistance across the cell core 1302, which may be determined by thevoltage difference between the data/sense line 1304 and the source line1306. In some embodiments, the voltage difference may be compared to thebit line reference 1308 and amplified by the sense amplifier 1309.

FIG. 13 illustrates one example of an operable STT-MRAM system 1300. Itis contemplated, however, that the magnetic cell cores (e.g., themagnetic cell core 101 (FIG. 1), the magnetic cell core 101′ (FIG. 1C),the magnetic cell core 501 (FIG. 5), the magnetic cell core 1201 (FIG.12)) may be incorporated and utilized within any STT-MRAM systemconfigured to incorporate a magnetic cell core having magnetic regions.

Accordingly, disclosed is a semiconductor device comprising a spintorque transfer magnetic random access memory (STT-MRAM) arraycomprising STT-MRAM cells. At least one STT-MRAM cell of the STT-MRAMcells comprises an oxide region over a substrate and a crystallinemagnetic region over the oxide region. The crystalline magnetic regionis formed from a magnetic material. An attracter material is proximateto the crystalline magnetic region. A chemical affinity of the attractermaterial for a diffused species from the magnetic material is higherthan a chemical affinity of at least one other species of the magneticmaterial for the diffused species. An intermediate oxide region is overthe crystalline magnetic region, and another magnetic region is over theintermediate oxide region.

With reference to FIG. 14, illustrated is a simplified block diagram ofa semiconductor device 1400 implemented according to one or moreembodiments described herein. The semiconductor device 1400 includes amemory array 1402 and a control logic component 1404. The memory array1402 may include a plurality of the STT-MRAM cells 1314 (FIG. 13)including any of the magnetic cell cores (e.g., the magnetic cell core101 (FIG. 1), the magnetic cell core 101′ (FIG. 1C), the magnetic cellcore 501 (FIG. 5), the magnetic cell core 1201 (FIG. 12)) discussedabove, which magnetic cell cores (e.g., the magnetic cell core 101 (FIG.1), the magnetic cell core 101′ (FIG. 1C), the magnetic cell core 501(FIG. 5), the magnetic cell core 1201 (FIG. 12)) may have been formedaccording to a method described above and may be operated according to amethod described above. The control logic component 1404 may beconfigured to operatively interact with the memory array 1402 so as toread from or write to any or all memory cells (e.g., STT-MRAM cell 1314(FIG. 13)) within the memory array 1402.

Accordingly, disclosed is a semiconductor device comprising a spintorque transfer magnetic random access memory (STT-MRAM) arraycomprising STT-MRAM cells. At least one STT-MRAM cell of the STT-MRAMcells comprises a free region over a substrate. An attracter region isproximate to the free region. The attracter region comprises anattracter material and a species diffused from the free region. Theattracter material has a chemical affinity for the species, and an oxideof the species induces magnetic anisotropy in the free region. Anintermediate oxide region is over the free region, and a fixed region isover the intermediate oxide region.

With reference to FIG. 15, depicted is a processor-based system 1500.The processor-based system 1500 may include various electronic devicesmanufactured in accordance with embodiments of the present disclosure.The processor-based system 1500 may be any of a variety of types such asa computer, pager, cellular phone, personal organizer, control circuit,or other electronic device. The processor-based system 1500 may includeone or more processors 1502, such as a microprocessor, to control theprocessing of system functions and requests in the processor-basedsystem 1500. The processor 1502 and other subcomponents of theprocessor-based system 1500 may include magnetic memory devicesmanufactured in accordance with embodiments of the present disclosure.

The processor-based system 1500 may include a power supply 1504 inoperable communication with the processor 1502. For example, if theprocessor-based system 1500 is a portable system, the power supply 1504may include one or more of a fuel cell, a power scavenging device,permanent batteries, replaceable batteries, and rechargeable batteries.The power supply 1504 may also include an AC adapter; therefore, theprocessor-based system 1500 may be plugged into a wall outlet, forexample. The power supply 1504 may also include a DC adapter such thatthe processor-based system 1500 may be plugged into a vehicle cigarettelighter or a vehicle power port, for example.

Various other devices may be coupled to the processor 1502 depending onthe functions that the processor-based system 1500 performs. Forexample, a user interface 1506 may be coupled to the processor 1502. Theuser interface 1506 may include input devices such as buttons, switches,a keyboard, a light pen, a mouse, a digitizer and stylus, a touchscreen, a voice recognition system, a microphone, or a combinationthereof. A display 1508 may also be coupled to the processor 1502. Thedisplay 1508 may include an LCD display, an SED display, a CRT display,a DLP display, a plasma display, an OLED display, an LED display, athree-dimensional projection, an audio display, or a combinationthereof. Furthermore, an RF sub-system/baseband processor 1510 may alsobe coupled to the processor 1502. The RF sub-system/baseband processor1510 may include an antenna that is coupled to an RF receiver and to anRF transmitter (not shown). A communication port 1512, or more than onecommunication port 1512, may also be coupled to the processor 1502. Thecommunication port 1512 may be adapted to be coupled to one or moreperipheral devices 1514, such as a modem, a printer, a computer, ascanner, or a camera, or to a network, such as a local area network,remote area network, intranet, or the Internet, for example.

The processor 1502 may control the processor-based system 1500 byimplementing software programs stored in the memory. The softwareprograms may include an operating system, database software, draftingsoftware, word processing software, media editing software, or mediaplaying software, for example. The memory is operably coupled to theprocessor 1502 to store and facilitate execution of various programs.For example, the processor 1502 may be coupled to system memory 1516,which may include one or more of spin torque transfer magnetic randomaccess memory (STT-MRAM), magnetic random access memory (MRAM), dynamicrandom access memory (DRAM), static random access memory (SRAM),racetrack memory, and other known memory types. The system memory 1516may include volatile memory, non-volatile memory, or a combinationthereof. The system memory 1516 is typically large so that it can storedynamically loaded applications and data. In some embodiments, thesystem memory 1516 may include semiconductor devices, such as thesemiconductor device 1400 of FIG. 14, memory cells including any of themagnetic cell cores (e.g., the magnetic cell core 101 (FIG. 1), themagnetic cell core 101′ (FIG. 1C), the magnetic cell core 501 (FIG. 5),the magnetic cell core 1201 (FIG. 12)) described above, or a combinationthereof.

The processor 1502 may also be coupled to non-volatile memory 1518,which is not to suggest that system memory 1516 is necessarily volatile.The non-volatile memory 1518 may include one or more of STT-MRAM, MRAM,read-only memory (ROM) such as an EPROM, resistive read-only memory(RROM), and flash memory to be used in conjunction with the systemmemory 1516. The size of the non-volatile memory 1518 is typicallyselected to be just large enough to store any necessary operatingsystem, application programs, and fixed data. Additionally, thenon-volatile memory 1518 may include a high capacity memory such as diskdrive memory, such as a hybrid-drive including resistive memory or othertypes of non-volatile solid-state memory, for example. The non-volatilememory 1518 may include semiconductor devices, such as the semiconductordevice 1400 of FIG. 14, memory cells including any of the magnetic cellcores (e.g., the magnetic cell core 101 (FIG. 1), the magnetic cell core101′ (FIG. 1C), the magnetic cell core 501 (FIG. 5), the magnetic cellcore 1201 (FIG. 12)) described above, or a combination thereof.

Accordingly, disclosed is a semiconductor device comprising an array ofmagnetic memory cells. At least one magnetic memory cell of the array ofmagnetic memory cells comprises at least two magnetic regions over anoxide region over a substrate. One of the at least two magnetic regionsexhibits a switchable magnetic orientation. An attracter material isproximate to the one of the at least two magnetic regions exhibiting theswitchable magnetic orientation. The attracter material is chemicallybonded to a species diffused from the one of the at least two magneticregions exhibiting the switchable magnetic orientation. An intermediateoxide region is between the at least two magnetic regions.

Example

With reference to FIGS. 16 through 22, magnetic cell core structures,both with and without attracter material, were fabricated and examinedto measure and compare characteristics, such as TMR, RA, and Hk (anindication of MA strength).

With reference to FIG. 16, magnetic cell core structure 1600, having amagnetic cell core 1601 without an attracter material, was tested, theresults of which are depicted in FIGS. 17A through 17C. The magneticcell core structure 1600 included a tantalum (Ta) lower electrode 1605.Thereover, a CoFeB foundation region 1660 was formed to a thickness of 6Å (0.6 nm). Thereover, a magnesium oxide (MgO) secondary oxide region1670 was formed to a thickness of about 5 Å (about 0.5 nm). Thereover, afree region 1620 was formed from CoFeB to a thickness of 14 Å (1.4 nm).Thereover, an intermediate oxide region 1630 of MgO was formed to athickness of about 7 Å (about 0.7 nm) to about 8 Å (about 0.8 nm).Thereover, a fixed region 1610 was formed having a lower fixed region1614, an intermediate fixed region 1615, and an upper fixed region 1616.The lower fixed region 1614 was formed from CoFeB to a thickness of 13 Å(about 1.3 nm). The intermediate fixed region 1615 was formed oftantalum (Ta) to a thickness of about 3 Å (about 0.3 nm). The upperfixed region 1616 was formed of alternating sub-regions of cobalt (Co)and palladium (Pd). Thereover, at least a portion of an upper electrode1604 was formed of at least one of tantalum (Ta), tungsten (W), andruthenium (Ru).

With reference to FIG. 17A, an R-H loop evaluation of the magnetic cellstructure 1600 (FIG. 16) was made to measure TMR and RA. Theseevaluations and measurements were made by conventional techniques (e.g.,a current-in-plane technique (CIPT)), which are not described in detailherein. In an R-H loop plot, a sharp transition at low fields (e.g.,around 0% field) suggests a free region reversal (i.e., a switch in themagnetic configuration between anti-parallel and parallel, or viceversa, of a free region). No sharp transition in an R-H loop indicatesno free region reversal (i.e., no switch in magnetic configurationbetween anti-parallel and parallel, or vice versa, of a free region).Notably, in FIG. 17A, no substantial transition is indicated for themagnetic cell structure 1600 (FIG. 16), lacking the attracter material.The TMR of the magnetic cell structure 1600 was found to be about 0.01(i.e., about 1%). The resistance area product (RA) of the magnetic cellstructure 1600, an indication of the electrical resistance of themagnetic cell structure 1600, was found to be about 12 Ω·μm². In FIG.17B, an in-plane loop evaluation was conducted of the magnetic cellstructure 1600, using conventional methods that are not described indetail herein. The in-plane loop evaluation indicates an Hk value (anindication of MA strength) of 1,607 Oe (127.9 kA/m). With reference toFIG. 17C, the TMR measurement was confirmed with an M-H loop evaluation,which was conducted using conventional methods that are not described indetail herein. The M-H loop evaluation indicated a TMR of less than 5%.Accordingly, the magnetic cell structure 1600, lacking the attractermaterial proximate to the free region 1620 was measured to have a weakTMR (e.g., less than 5%), an RA of about 12 Ω·μm², and an Hk value (anindication of MA strength) of about 1,600 Oe (e.g., 1607 Oe (127.9kA/m)).

With reference to FIG. 18, a magnetic cell core structure 1800, having astructure according to an embodiment of the present disclosure andformed according to an embodiment of the present disclosure, was formedto have the same structure as that of the magnetic cell core structure1600 (FIG. 16) with the exception of an attracter region 1880 oftantalum (Ta), formed to a thickness of 3 Å (0.3 nm), between thesecondary oxide region 1670 and the free region 1620.

With reference to FIG. 19A, an R-H loop evaluation of the magnetic cellstructure 1800 (FIG. 18) was made. The TMR of the magnetic cellstructure 1800 was found to be about 42%, substantially greater than theless than 5% TMR measured for the magnetic cell structure 1600 (FIG. 16)lacking the attracter region 1880. The RA of the magnetic cell structure1800, with the attracter region 1880, was measured to be about 15 Ω·μm².With reference to FIG. 19B, an in-plane loop evaluation of the magneticcell structure 1800 indicated an Hk of 2,276 Oe (181.1 kA/m). Thus, theMA strength of the magnetic cell structure 1800, with the attracterregion 1880, was found to be higher than the MA strength of the magneticcell structure 1600 (FIG. 16), without the attracter region 1880, eventhough the attracter region 1880 was between the free region 1620 andthe secondary oxide region 1670. With reference to FIG. 19C, an M-H loopevaluation of the magnetic cell structure 1800 confirmed the TMRmeasurement of about 42%. Thus, the magnetic cell structure 1800, withthe attracter region 1880 proximate to the free region 1620, wasmeasured to have a stronger TMR than the magnetic cell structure 1600(FIG. 16) without the attracter region 1880 (i.e., 42% compared to lessthan 5%), along with an RA of about 15 Ω·μm² (compared to the RA ofabout 12 Ω·μm² for the magnetic cell structure 1600) and an Hk of about2,276 Oe (181.1 kA/m) (compared to 1,607 Oe (127.9 kA/m) for themagnetic cell structure 1600).

Accordingly, including the attracter region 1880 increased the TMR ofthe magnetic cell structure 1800 substantially. Additionally, the MAstrength was found to substantially increase. Therefore, the inclusionof the attracter region 1880 proximate to the free region 1620 enableshigher TMR and high MA strength in the magnetic cell structure 1800.

With reference to FIG. 20, another magnetic cell structure 2000 wasevaluated. The magnetic cell structure 2000 included a magnetic cellcore 2001 having the same structure as the magnetic cell core 1801 (FIG.18), but with a thicker attracter region 2080. The attracter region 2080was formed of tantalum (Ta), to a thickness of 5 Å (0.5 nm) (compared tothe 3 Å (0.3 nm) attracter region 1880 (FIG. 18)), between the secondaryoxide region 1670 and the free region 1620. The magnetic cell structure2000, with the thicker attracter region 2080, was found to have a TMR ofabout 77%, an RA of about 11 Ω·μm², and an Hk of about 2,300 Oe (about183.0 kA/m) (compared to the 42% TMR, the 15 Ω·μm², and the 2,276 Oe(181.1 kA/m) of the magnetic cell structure 1800 of FIG. 18). Thus,increasing the thickness of the attracter region 2080 yielded anincrease in the TMR.

With reference to FIGS. 21 and 22, another magnetic cell structure 2100was evaluated. The magnetic cell structure 2100 included a magnetic cellcore 2101 having the same structure as the magnetic cell core 2001 (FIG.20), but with a thinner secondary oxide region 2170. The secondary oxideregion 2170 was formed of magnesium oxide (MgO) to a thickness of about3 Å (about 0.3 nm) (compared to the about 5 Å (about 0.5 nm) secondaryoxide region 1670 of FIG. 20). The magnetic cell structure 2100, withthe thicker attracter region 2080 and the thinner secondary oxide region2170, was found to have a TMR of about 130% (see the R-H loop plot ofFIG. 22), an RA of about 6.9 Ω·μm², and an Hk of about 1,500 Oe (about119.4 kA/m). Thus, decreasing the thickness of the secondary oxideregion 2170 substantially increased the TMR (130%, compared to the TMRof about 77% for the magnetic cell structure 2000 of FIG. 20), whilestill maintaining a strong MA strength (e.g., an Hk of about 1,500 Oe(about 119.4 kA/m), though the MA strength was less than that of themagnetic cell structure 2000 (FIG. 20) (about 2,300 Oe (about 183.0kA/m))).

Another magnetic cell structure (not illustrated) having the secondaryoxide region 2170 (FIG. 21) (i.e., MgO of about 3 Å (about 0.3 nm) inthickness) and the attracter region 1880 (FIG. 18) (i.e., Ta of 3 Å (0.3nm) in thickness) was also evaluated for MA strength and found to havean Hk of about 1,200 Oe (about 95.5 kA/m). Thus, decreasing thethickness of the attracter region 1880 separating the secondary oxideregion 2170 from the free region 1620 decreased MA strength.

Accordingly, including an attracter material proximate to a free region,even between the free region and an MA-inducing oxide region, mayincrease TMR without degrading MA strength. In some embodiments, TMRvalues of above 100% and strong MA values (e.g., at least about 1,500 Oe(above about 119.4 kA/m)) may be achieved.

While the present disclosure is susceptible to various modifications andalternative forms in implementation thereof, specific embodiments havebeen shown by way of example in the drawings and have been described indetail herein. However, the present disclosure is not intended to belimited to the particular forms disclosed. Rather, the presentdisclosure encompasses all modifications, combinations, equivalents,variations, and alternatives falling within the scope of the presentdisclosure as defined by the following appended claims and their legalequivalents.

1. A memory cell, comprising: a magnetic cell core comprising: a magnetic region exhibiting a switchable magnetic orientation and formed from a magnetic material comprising a diffusible species and at least one other species; another magnetic region exhibiting a fixed magnetic orientation; an intermediate oxide region between the magnetic region and the another magnetic region; another oxide region spaced from the intermediate oxide region by the magnetic region; and an attracter material proximate to the magnetic region, a chemical affinity of the attracter material for the diffusible species being higher than a chemical affinity of the at least one other species for the diffusible species.
 2. The memory cell of claim 1, wherein the attracter material is between the another oxide region and the magnetic region.
 3. The memory cell of claim 1, wherein the attracter material comprises at least one of tantalum, tungsten, hafnium, zirconium, a compound thereof, and a combination thereof.
 4. The memory cell of claim 1, wherein the magnetic material comprises a cobalt iron boron (CoFeB) material.
 5. The memory cell of claim 1, wherein the diffusible species comprises boron.
 6. The memory cell of claim 1, further comprising an attracter region comprising the attracter material and the diffusible species, the diffusible species having diffused from the magnetic material from which the magnetic region was formed.
 7. The memory cell of claim 1, wherein the magnetic region has a bcc (001) crystalline structure.
 8. The memory cell of claim 1, wherein the attracter material is integrated with the another oxide region.
 9. The memory cell of claim 1, wherein the memory cell has a tunnel magnetoresistance of greater than 100%.
 10. A method of forming a magnetic memory cell, comprising: forming a precursor structure comprising: forming a magnetic material between an oxide material and another oxide material, the magnetic material exhibiting a switchable magnetic orientation; forming an attracter material proximate to the magnetic material, the attracter material having a chemical affinity for a diffusible species of the magnetic material; transferring the diffusible species from the magnetic material to the attracter material; and forming a magnetic cell core structure from the precursor structure.
 11. The method of claim 10, wherein: forming a magnetic material between an oxide material and another oxide material comprises: forming the oxide material over a substrate; forming the magnetic material over the oxide material; and forming the another oxide material over the magnetic material; and forming a magnetic cell core structure from the precursor structure comprises patterning the precursor structure to form a secondary oxide region from the oxide material, a free region from the magnetic material, and an intermediate oxide region from the another oxide material.
 12. The method of claim 11, further comprising forming another magnetic material over the another oxide material, the another magnetic material exhibiting a fixed magnetic orientation.
 13. The method of claim 10, wherein: forming a magnetic material between an oxide material and another oxide material comprises: forming the another oxide material over another magnetic material exhibiting a fixed magnetic orientation; forming the magnetic material over the another oxide material; and forming the oxide material over the magnetic material; and forming a magnetic cell core structure from the precursor structure comprises patterning the precursor structure to form a fixed region from the another magnetic material, an intermediate oxide region from the another oxide material, a free region from the magnetic material, and a secondary oxide region from the oxide material.
 14. The method of claim 10, wherein forming a magnetic material between an oxide material and another oxide material comprises: forming a metal over a substrate; and oxidizing the metal to form the oxide material.
 15. The method of claim 14, wherein: forming a metal over a substrate comprises forming magnesium over the substrate; and oxidizing the metal to form the oxide material comprises oxidizing the magnesium to form magnesium oxide.
 16. The method of claim 14, wherein: forming an attracter material proximate to the magnetic material comprises, before oxidizing the metal, forming the attracter material adjacent to the metal; and oxidizing the metal to form the oxide material comprises exposing the attracter material to an oxidizing environment.
 17. The method of claim 10, wherein transferring the diffusible species from the magnetic material to the attracter material comprises annealing the magnetic material, the oxide material, and the attracter material.
 18. The method of claim 10, wherein transferring the diffusible species from the magnetic material to the attracter material comprises transferring boron from the magnetic material to the attracter material.
 19. The method of claim 10: wherein transferring the diffusible species from the magnetic material to the attracter material converts the magnetic material to a depleted magnetic material; and further comprising crystallizing the depleted magnetic material.
 20. A semiconductor device, comprising: a spin torque transfer magnetic random access memory (STT-MRAM) array comprising: STT-MRAM cells, at least one STT-MRAM cell of the STT-MRAM cells comprising: a free region over a substrate; an attracter region proximate to the free region, the attracter region comprising an attracter material and a species diffused from the free region, the attracter material having a chemical affinity for the species, an oxide of the species inducing magnetic anisotropy in the free region; an intermediate oxide region over the free region; and a fixed region over the intermediate oxide region.
 21. The semiconductor device of claim 20, wherein the attracter material consists of a metal or a metal compound.
 22. The semiconductor device of claim 20, wherein the attracter region is physically isolated from the fixed region.
 23. The semiconductor device of claim 20, further comprising a secondary oxide region beneath the free region.
 24. A semiconductor device, comprising: a spin torque transfer magnetic random access memory (STT-MRAM) array comprising: STT-MRAM cells, at least one STT-MRAM cell of the STT-MRAM cells comprising: an oxide region over a substrate; a crystalline magnetic region over the oxide region, the crystalline magnetic region formed from a magnetic material; an attracter material proximate to the crystalline magnetic region, a chemical affinity of the attracter material for a diffused species from the magnetic material being higher than a chemical affinity of at least one other species of the magnetic material for the diffused species; an intermediate oxide region over the crystalline magnetic region; and another magnetic region over the intermediate oxide region.
 25. The semiconductor device of claim 24, wherein: the diffused species comprises boron; and the attracter material is chemically bonded to the boron.
 26. A semiconductor device, comprising: an array of magnetic memory cells, at least one magnetic memory cell of the array of magnetic memory cells comprising: at least two magnetic regions over an oxide region over a substrate, one of the at least two magnetic regions exhibiting a switchable magnetic orientation; an attracter material proximate to the one of the at least two magnetic regions exhibiting the switchable magnetic orientation, the attracter material chemically bonded to a species diffused from the one of the at least two magnetic regions exhibiting the switchable magnetic orientation; and an intermediate oxide region between the at least two magnetic regions.
 27. The semiconductor device of claim 26, wherein the one of the at least two magnetic regions exhibits a perpendicular switchable magnetic orientation. 